Аннотации:
© 2020, Allerton Press, Inc. Abstract: The problem of the description of the strong interaction of the InAs/GaAs exciton quantum dot (QD) grown by molecular-beam epitaxy with acoustic phonon and electron reservoirs is studied. A nonperturbative solution to the self-energy function of the exciton quantum dot is found. It is shown that these functions at temperatures higher than 10 K differ significantly from those obtained within in the Born approximation. The accurate calculation of the self-energy function of the exciton QD makes it possible to solve the problem of decoherence and dephasing of quantum states, which opens the way to develop single-photon sources necessary in quantum calculations and quantum communication.