Spin-Dependent Electron Transport in MeRAM

dc.contributor.author	Useinov N.K.
dc.contributor.author	Chuklanov A.P.
dc.contributor.author	Bizyaev D.A.
dc.contributor.author	Nurgazizov N.I.
dc.contributor.author	Bukharaev A.A.
dc.date.accessioned	2021-02-25T20:37:23Z
dc.date.available	2021-02-25T20:37:23Z
dc.date.issued	2020
dc.identifier.issn	1063-7834
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/162078
dc.description.abstract	© 2020, Pleiades Publishing, Ltd. Abstract: The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction’s ferromagnet\|insulator\|ferromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnetoresistance like functions of orientations magnetizations of layers.
dc.relation.ispartofseries	Physics of the Solid State
dc.subject	magnetic hetero-structure
dc.subject	magnetic tunnel junction
dc.subject	spin-dependent current
dc.subject	straintronics
dc.subject	tunnel magnetoresistance
dc.title	Spin-Dependent Electron Transport in MeRAM
dc.type	Article
dc.relation.ispartofseries-issue	9
dc.relation.ispartofseries-volume	62
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	1706
dc.source.id	SCOPUS10637834-2020-62-9-SID85090907936

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Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.