Spin-Dependent Electron Transport in MeRAM

Useinov N.K.; Nurgazizov N.I.; Bizyaev D.A.; Chuklanov A.P.; Bukharaev A.A.

Spin-Dependent Electron Transport in MeRAM

Useinov N.K.; Chuklanov A.P.; Bizyaev D.A.; Nurgazizov N.I.; Bukharaev A.A.

URI: https://dspace.kpfu.ru/xmlui/handle/net/162078

Date: 2020

Abstract:

© 2020, Pleiades Publishing, Ltd. Abstract: The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction’s ferromagnet|insulator|ferromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnetoresistance like functions of orientations magnetizations of layers.

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.