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dc.contributor.author | Stepanov A. | |
dc.contributor.author | Vorobev V. | |
dc.contributor.author | Rogov A. | |
dc.contributor.author | Nuzhdin V. | |
dc.contributor.author | Valeev V. | |
dc.date.accessioned | 2020-01-15T21:17:07Z | |
dc.date.available | 2020-01-15T21:17:07Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0168-583X | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/155516 | |
dc.description.abstract | © 2019 Elsevier B.V. The article describes the study of Si surface sputtering with the low-energy high-dose implantation by Ag+ ions with energy E = 30 keV and current density J = 8 μA/cm2. The radiation dose was D = 2.5 · 1016–1.5 · 1017 ion/cm2. It was found that the thickness of the spattered Ag:Si layer monotonously increased up to 50 nm when D reached its maximum, and the value of the effective sputtering yield was ~1.6. | |
dc.relation.ispartofseries | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | |
dc.subject | Ion implantation | |
dc.subject | Porous silicon | |
dc.subject | Silver ions | |
dc.subject | Surface sputtering | |
dc.title | Sputtering of silicon surface by silver-ion implantation | |
dc.type | Article | |
dc.relation.ispartofseries-volume | 457 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 1 | |
dc.source.id | SCOPUS0168583X-2019-457-SID85069689951 |