dc.contributor.author |
Stepanov A. |
|
dc.contributor.author |
Vorobev V. |
|
dc.contributor.author |
Rogov A. |
|
dc.contributor.author |
Nuzhdin V. |
|
dc.contributor.author |
Valeev V. |
|
dc.date.accessioned |
2020-01-15T21:17:07Z |
|
dc.date.available |
2020-01-15T21:17:07Z |
|
dc.date.issued |
2019 |
|
dc.identifier.issn |
0168-583X |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/155516 |
|
dc.description.abstract |
© 2019 Elsevier B.V. The article describes the study of Si surface sputtering with the low-energy high-dose implantation by Ag+ ions with energy E = 30 keV and current density J = 8 μA/cm2. The radiation dose was D = 2.5 · 1016–1.5 · 1017 ion/cm2. It was found that the thickness of the spattered Ag:Si layer monotonously increased up to 50 nm when D reached its maximum, and the value of the effective sputtering yield was ~1.6. |
|
dc.relation.ispartofseries |
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
|
dc.subject |
Ion implantation |
|
dc.subject |
Porous silicon |
|
dc.subject |
Silver ions |
|
dc.subject |
Surface sputtering |
|
dc.title |
Sputtering of silicon surface by silver-ion implantation |
|
dc.type |
Article |
|
dc.relation.ispartofseries-volume |
457 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
1 |
|
dc.source.id |
SCOPUS0168583X-2019-457-SID85069689951 |
|