Sputtering of silicon surface by silver-ion implantation

dc.contributor.author	Stepanov A.
dc.contributor.author	Vorobev V.
dc.contributor.author	Rogov A.
dc.contributor.author	Nuzhdin V.
dc.contributor.author	Valeev V.
dc.date.accessioned	2020-01-15T21:17:07Z
dc.date.available	2020-01-15T21:17:07Z
dc.date.issued	2019
dc.identifier.issn	0168-583X
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/155516
dc.description.abstract	© 2019 Elsevier B.V. The article describes the study of Si surface sputtering with the low-energy high-dose implantation by Ag+ ions with energy E = 30 keV and current density J = 8 μA/cm2. The radiation dose was D = 2.5 · 1016–1.5 · 1017 ion/cm2. It was found that the thickness of the spattered Ag:Si layer monotonously increased up to 50 nm when D reached its maximum, and the value of the effective sputtering yield was ~1.6.
dc.relation.ispartofseries	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.subject	Ion implantation
dc.subject	Porous silicon
dc.subject	Silver ions
dc.subject	Surface sputtering
dc.title	Sputtering of silicon surface by silver-ion implantation
dc.type	Article
dc.relation.ispartofseries-volume	457
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	1
dc.source.id	SCOPUS0168583X-2019-457-SID85069689951

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Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.