The oscillations in ESR spectra of Hg<inf>0.76</inf>Cd<inf>0.24</inf>Te implanted by Ag⁺ at the X and Q-bands

Abstract

© 2018 Chinese Institute of Electronics. The objects of the investigation were uniformly Ag+ doped Hg0.76Cd0.24Te mercury chalcogenide monocrystals obtained by ion implantation with subsequent thermal annealing over 20 days. After implantation and annealing the conductivity was inverted from n-type with carrier concentration of 1016 cm-3 to p-type with carrier concentration of ≈ 3.9 × 1015 cm-3. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong oscillations in the magnetic field for Ag:Hg0.76Cd0.24Te in the temperature range 4.2-12 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependency of oscillation amplitude. We suppose that this phenomenon is similar to the de Haas-van Alphen effect in weakly correlated electron system with imperfect nesting vector.