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Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure | 200 |
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Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure | 9 | 8 | 0 | 2 | 1 | 11 | 39 |
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SCOPUS00319007-2015-115-24-SID84949662090-a1.pdf | 14 |
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