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dc.contributor.author | Luchkin A. | |
dc.contributor.author | Kashapov N. | |
dc.date.accessioned | 2018-09-18T20:25:17Z | |
dc.date.available | 2018-09-18T20:25:17Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 1742-6588 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/139716 | |
dc.description.abstract | © Published under licence by IOP Publishing Ltd. Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiOx coatings deposition without changing atmosphere and pressure in vacuum chamber. | |
dc.relation.ispartofseries | Journal of Physics: Conference Series | |
dc.title | Reactive magnetron sputtering model at making Ti-TiOx coatings | |
dc.type | Conference Paper | |
dc.relation.ispartofseries-issue | 1 | |
dc.relation.ispartofseries-volume | 567 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS17426588-2014-567-1-SID84914165894 |