Electrochemical oxidation of hexaalkyldisilanes

dc.contributor.author	Zhuikov V.
dc.date.accessioned	2018-09-17T21:23:14Z
dc.date.available	2018-09-17T21:23:14Z
dc.date.issued	1999
dc.identifier.issn	1070-3632
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/134924
dc.description.abstract	Electrochemical oxidation of hexaalkyldisilanes in acetonitrile follows the activation mechanism with cleavage of the Si-Si bond in the overall two-electron process. Oxidation of hexamethyldisilane occurs at a potential 1 V more positive than the standard potential of the process. The standard potential of the leaving group Me3Si+/Me3Si is negative and large in value, which determines the activation character of the whole process. © 1999 MAHK "Hayka/Interperiodica".
dc.relation.ispartofseries	Russian Journal of General Chemistry
dc.title	Electrochemical oxidation of hexaalkyldisilanes
dc.type	Article
dc.relation.ispartofseries-issue	12
dc.relation.ispartofseries-volume	69
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	1906
dc.source.id	SCOPUS10703632-1999-69-12-SID23044518790

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