Studies of the Auger spectrum from the (100) surface of GaAs using positron annihilation induced Auger electron spectroscopy

Abstract

Measurements of the first high-resolution positron annihilation induced Auger spectrum from GaAs(100) are presented. The spectrum displays six As and three Ga Auger peaks below 110 eV, including a strong As M4,5VV peak at 28 eV and a less intense Ga M2,3M4,5M4,5 peak at 53 eV. The Auger peak intensities are used to obtain experimental annihilation probabilities for relevant core-level electrons. Experimental results are compared with first-principles calculations of positron surface states and annihilation characteristics of surface trapped positrons. Copyright (C) 2000 Elsevier Science Ltd. | Measurements of the first high-resolution positron annihilation induced Auger spectrum from GaAs(100) are presented. The spectrum displays six As and three Ga Auger peaks below 110 eV, including a strong As M4,5VV peak at 28 eV and a less intense Ga M2,3M4,5M4,5 peak at 53 eV. The Auger peak intensities are used to obtain experimental annihilation probabilities for relevant core-level electrons. Experimental results are compared with first-principles calculations of positron surface states and annihilation characteristics of surface trapped positrons.