ELECTRICAL PROPERTIES OF TITANIUM NITRIDE FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING

Abstract

A use of the four-probe resistance measurements as a tool for characterization of a quality of titanium nitride thin films deposited by the reactive dc magnetron sputtering will be discussed in the report. Few series of ~ 50 nm thick films on various substrates as fused silica, monocrystalline silicon and magnesium oxide have been deposited with several degrees of freedom (substrate temperature, magnetron chamber atmosphere and working pressure etc.) varied in a wide range. Electrical resistivity correlation with the films properties will be reported.