Stepanov A.L.; Khantimerov S.M.; Nuzhdin V.I.; Valeev V.F.; Rogov A.M.
(2021)
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = 1.3·1016 ion/cm2 and at current density J = 5 μA/cm2 for various substrate temperatures from 25 to 400 °C were studied. ...