MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide.

A. A. LEBEDEV.

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dc.contributor.author	A. A. LEBEDEV.
dc.date.accessioned	2024-01-26T21:45:19Z
dc.date.available	2024-01-26T21:45:19Z
dc.date.issued	2017
dc.identifier.citation	MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide. - [Place of publication not identified]: MATERIALS RESEARCH FORUM, 2017 - 1 online resource - URL: https://libweb.kpfu.ru/ebsco/pdf/1426558.pdf
dc.identifier.isbn	1945291117
dc.identifier.isbn	9781945291111
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/178995
dc.description.abstract	The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
dc.description.tableofcontents	2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons.
dc.description.tableofcontents	3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide.
dc.description.tableofcontents	4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors.
dc.language	English
dc.language.iso	en
dc.publisher	[Place of publication not identified] MATERIALS RESEARCH FORUM
dc.relation.ispartofseries	Materials Research Foundations. volume 6 (2017)
dc.subject.other	Silicon carbide -- Effect of radiation on.
dc.subject.other	Materials science -- Data processing.
dc.subject.other	SCIENCE / Chemistry / Inorganic
dc.subject.other	Electronic books.
dc.title	MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide.
dc.type	Book
dc.description.pages	1 online resource
dc.collection	Электронно-библиотечные системы
dc.source.id	EN05CEBSCO05C2996