Электронный архив

MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide.

Показать сокращенную информацию

dc.contributor.author A. A. LEBEDEV.
dc.date.accessioned 2024-01-26T21:45:19Z
dc.date.available 2024-01-26T21:45:19Z
dc.date.issued 2017
dc.identifier.citation MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide. - [Place of publication not identified]: MATERIALS RESEARCH FORUM, 2017 - 1 online resource - URL: https://libweb.kpfu.ru/ebsco/pdf/1426558.pdf
dc.identifier.isbn 1945291117
dc.identifier.isbn 9781945291111
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/178995
dc.description.abstract The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed.
dc.description.tableofcontents 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons.
dc.description.tableofcontents 3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide.
dc.description.tableofcontents 4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors.
dc.language English
dc.language.iso en
dc.publisher [Place of publication not identified] MATERIALS RESEARCH FORUM
dc.relation.ispartofseries Materials Research Foundations. volume 6 (2017)
dc.subject.other Silicon carbide -- Effect of radiation on.
dc.subject.other Materials science -- Data processing.
dc.subject.other SCIENCE / Chemistry / Inorganic
dc.subject.other Electronic books.
dc.title MATERIALS RESEARCH FOUNDATIONS: radiation effects in silicon carbide.
dc.type Book
dc.description.pages 1 online resource
dc.collection Электронно-библиотечные системы
dc.source.id EN05CEBSCO05C2996


Файлы в этом документе

Данный элемент включен в следующие коллекции

Показать сокращенную информацию

Поиск в электронном архиве


Расширенный поиск

Просмотр

Моя учетная запись

Статистика