Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation

Piyanzina Irina Ivanovna; Mamin Rinat Fayzrakhmanovich

dc.contributor	Казанский федеральный университет
dc.contributor.author	Piyanzina Irina Ivanovna
dc.contributor.author	Mamin Rinat Fayzrakhmanovich
dc.date.accessioned	2022-12-06T08:08:43Z
dc.date.available	2022-12-06T08:08:43Z
dc.date.issued	2022
dc.identifier.citation	Piyanzina I. Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation / I. Piyanzina, R. Mamin // Journal of Materials Science. - 2022. - P. 1-10.
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/173374
dc.description.abstract
dc.language.iso	en
dc.relation.ispartofseries	Journal of Materials Science
dc.rights	открытый доступ
dc.subject	DFT
dc.subject	heterostructure
dc.subject	ferroelectric
dc.subject	magneto-electric coupling
dc.subject	2DEG
dc.title	Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation
dc.type	Article
dc.contributor.org	Институт физики
dc.description.pages	1-10
dc.pub-id	273647
dc.identifier.doi	10.1007/s10853-022-08000-2