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Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation

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dc.contributor Казанский федеральный университет
dc.contributor.author Piyanzina Irina Ivanovna
dc.contributor.author Mamin Rinat Fayzrakhmanovich
dc.date.accessioned 2022-12-06T08:08:43Z
dc.date.available 2022-12-06T08:08:43Z
dc.date.issued 2022
dc.identifier.citation Piyanzina I. Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation / I. Piyanzina, R. Mamin // Journal of Materials Science. - 2022. - P. 1-10.
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/173374
dc.description.abstract
dc.language.iso en
dc.relation.ispartofseries Journal of Materials Science
dc.rights открытый доступ
dc.subject DFT
dc.subject heterostructure
dc.subject ferroelectric
dc.subject magneto-electric coupling
dc.subject 2DEG
dc.title Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation
dc.type Article
dc.contributor.org Институт физики
dc.description.pages 1-10
dc.pub-id 273647
dc.identifier.doi 10.1007/s10853-022-08000-2


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