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dc.contributor.author | Fairushin I.I. | |
dc.contributor.author | Shemakhin A.Y. | |
dc.contributor.author | Khabir’yanova A.A. | |
dc.date.accessioned | 2022-02-09T20:31:05Z | |
dc.date.available | 2022-02-09T20:31:05Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0018-1439 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/168696 | |
dc.description.abstract | Abstract: Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined. | |
dc.relation.ispartofseries | High Energy Chemistry | |
dc.subject | copper nanofilm | |
dc.subject | gas discharge | |
dc.subject | molecular dynamics | |
dc.subject | self-assembly | |
dc.subject | sputtering | |
dc.title | Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 5 | |
dc.relation.ispartofseries-volume | 55 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 399 | |
dc.source.id | SCOPUS00181439-2021-55-5-SID85115357777 |