dc.contributor.author |
Fairushin I.I. |
|
dc.contributor.author |
Shemakhin A.Y. |
|
dc.contributor.author |
Khabir’yanova A.A. |
|
dc.date.accessioned |
2022-02-09T20:31:05Z |
|
dc.date.available |
2022-02-09T20:31:05Z |
|
dc.date.issued |
2021 |
|
dc.identifier.issn |
0018-1439 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/168696 |
|
dc.description.abstract |
Abstract: Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined. |
|
dc.relation.ispartofseries |
High Energy Chemistry |
|
dc.subject |
copper nanofilm |
|
dc.subject |
gas discharge |
|
dc.subject |
molecular dynamics |
|
dc.subject |
self-assembly |
|
dc.subject |
sputtering |
|
dc.title |
Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
5 |
|
dc.relation.ispartofseries-volume |
55 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
399 |
|
dc.source.id |
SCOPUS00181439-2021-55-5-SID85115357777 |
|