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dc.contributor.author | Lyadov N.M. | |
dc.contributor.author | Gavrilova T.P. | |
dc.contributor.author | Khantimerov S.M. | |
dc.contributor.author | Bazarov V.V. | |
dc.contributor.author | Suleimanov N.M. | |
dc.contributor.author | Shustov V.A. | |
dc.contributor.author | Nuzhdin V.I. | |
dc.contributor.author | Yanilkin I.V. | |
dc.contributor.author | Gumarov A.I. | |
dc.contributor.author | Faizrakhmanov I.A. | |
dc.contributor.author | Tagirov L.R. | |
dc.date.accessioned | 2021-02-26T20:37:38Z | |
dc.date.available | 2021-02-26T20:37:38Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 1063-7850 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/163051 | |
dc.description.abstract | © 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films. | |
dc.relation.ispartofseries | Technical Physics Letters | |
dc.subject | ion implantation | |
dc.subject | lithium-ion batteries | |
dc.subject | nanostructured germanium | |
dc.title | Formation of Pores in Thin Germanium Films under Implantation by Ge<sup>+</sup> Ions | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 7 | |
dc.relation.ispartofseries-volume | 46 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 707 | |
dc.source.id | SCOPUS10637850-2020-46-7-SID85090025781 |