dc.contributor.author |
Lyadov N.M. |
|
dc.contributor.author |
Gavrilova T.P. |
|
dc.contributor.author |
Khantimerov S.M. |
|
dc.contributor.author |
Bazarov V.V. |
|
dc.contributor.author |
Suleimanov N.M. |
|
dc.contributor.author |
Shustov V.A. |
|
dc.contributor.author |
Nuzhdin V.I. |
|
dc.contributor.author |
Yanilkin I.V. |
|
dc.contributor.author |
Gumarov A.I. |
|
dc.contributor.author |
Faizrakhmanov I.A. |
|
dc.contributor.author |
Tagirov L.R. |
|
dc.date.accessioned |
2021-02-26T20:37:38Z |
|
dc.date.available |
2021-02-26T20:37:38Z |
|
dc.date.issued |
2020 |
|
dc.identifier.issn |
1063-7850 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/163051 |
|
dc.description.abstract |
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films. |
|
dc.relation.ispartofseries |
Technical Physics Letters |
|
dc.subject |
ion implantation |
|
dc.subject |
lithium-ion batteries |
|
dc.subject |
nanostructured germanium |
|
dc.title |
Formation of Pores in Thin Germanium Films under Implantation by Ge<sup>+</sup> Ions |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
7 |
|
dc.relation.ispartofseries-volume |
46 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
707 |
|
dc.source.id |
SCOPUS10637850-2020-46-7-SID85090025781 |
|