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Formation of Pores in Thin Germanium Films under Implantation by Ge<sup>+</sup> Ions

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dc.contributor.author Lyadov N.M.
dc.contributor.author Gavrilova T.P.
dc.contributor.author Khantimerov S.M.
dc.contributor.author Bazarov V.V.
dc.contributor.author Suleimanov N.M.
dc.contributor.author Shustov V.A.
dc.contributor.author Nuzhdin V.I.
dc.contributor.author Yanilkin I.V.
dc.contributor.author Gumarov A.I.
dc.contributor.author Faizrakhmanov I.A.
dc.contributor.author Tagirov L.R.
dc.date.accessioned 2021-02-26T20:37:38Z
dc.date.available 2021-02-26T20:37:38Z
dc.date.issued 2020
dc.identifier.issn 1063-7850
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/163051
dc.description.abstract © 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.
dc.relation.ispartofseries Technical Physics Letters
dc.subject ion implantation
dc.subject lithium-ion batteries
dc.subject nanostructured germanium
dc.title Formation of Pores in Thin Germanium Films under Implantation by Ge<sup>+</sup> Ions
dc.type Article
dc.relation.ispartofseries-issue 7
dc.relation.ispartofseries-volume 46
dc.collection Публикации сотрудников КФУ
dc.relation.startpage 707
dc.source.id SCOPUS10637850-2020-46-7-SID85090025781


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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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