Formation of Cu nanoparticles and Cu<inf>3</inf>Si phase in Si by ion implantation

dc.contributor.author	Gumarov A.I.
dc.contributor.author	Rogov A.M.
dc.contributor.author	Stepanov A.L.
dc.date.accessioned	2021-02-25T21:02:11Z
dc.date.available	2021-02-25T21:02:11Z
dc.date.issued	2020
dc.identifier.issn	2452-2139
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/162951
dc.description.abstract	© 2020 Elsevier Ltd The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1·1016 and 1.25·1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η″-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed.
dc.relation.ispartofseries	Composites Communications
dc.subject	Copper nanoparticles
dc.subject	Copper silicide
dc.subject	Ion implantation
dc.title	Formation of Cu nanoparticles and Cu<inf>3</inf>Si phase in Si by ion implantation
dc.type	Article
dc.relation.ispartofseries-volume	21
dc.collection	Публикации сотрудников КФУ
dc.source.id	SCOPUS24522139-2020-21-SID85089000316

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Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.