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dc.contributor.author | Kabanov V.V. | |
dc.contributor.author | Piyanzina I.I. | |
dc.contributor.author | Lysogorskiy Y.V. | |
dc.contributor.author | Tayurskii D.A. | |
dc.contributor.author | Mamin R.F. | |
dc.date.accessioned | 2021-02-25T20:56:58Z | |
dc.date.available | 2021-02-25T20:56:58Z | |
dc.date.issued | 2020 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/162772 | |
dc.description.abstract | © 2020 The Author(s). Published by IOP Publishing Ltd. We investigate the structural, electronic and magnetic properties of LaMnO3/BaTiO3 heterostructure by means of ab initio calculations within the GGA+U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO3 film is oriented perpendicular to the LaMnO3 substrate. We present atom and spin-resolved density of states calculations for LaMnO3/BaTiO3 heterostructure with different number of BaTiO3 overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO3/BaTiO3 heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices. | |
dc.subject | band structure calculations | |
dc.subject | ferroelectrics | |
dc.subject | ferromagnetism | |
dc.title | Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO<inf>3</inf>/BaTiO<inf>3</inf>interface | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 5 | |
dc.relation.ispartofseries-volume | 7 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS-2020-7-5-SID85090994985 |