dc.contributor.author |
Kabanov V.V. |
|
dc.contributor.author |
Piyanzina I.I. |
|
dc.contributor.author |
Lysogorskiy Y.V. |
|
dc.contributor.author |
Tayurskii D.A. |
|
dc.contributor.author |
Mamin R.F. |
|
dc.date.accessioned |
2021-02-25T20:56:58Z |
|
dc.date.available |
2021-02-25T20:56:58Z |
|
dc.date.issued |
2020 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/162772 |
|
dc.description.abstract |
© 2020 The Author(s). Published by IOP Publishing Ltd. We investigate the structural, electronic and magnetic properties of LaMnO3/BaTiO3 heterostructure by means of ab initio calculations within the GGA+U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO3 film is oriented perpendicular to the LaMnO3 substrate. We present atom and spin-resolved density of states calculations for LaMnO3/BaTiO3 heterostructure with different number of BaTiO3 overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO3/BaTiO3 heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices. |
|
dc.subject |
band structure calculations |
|
dc.subject |
ferroelectrics |
|
dc.subject |
ferromagnetism |
|
dc.title |
Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO<inf>3</inf>/BaTiO<inf>3</inf>interface |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
5 |
|
dc.relation.ispartofseries-volume |
7 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS-2020-7-5-SID85090994985 |
|