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Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions

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dc.contributor.author Vorob’ev V.V.
dc.contributor.author Rogov A.M.
dc.contributor.author Nuzhdin V.I.
dc.contributor.author Valeev V.F.
dc.contributor.author Stepanov A.L.
dc.date.accessioned 2021-02-25T20:37:24Z
dc.date.available 2021-02-25T20:37:24Z
dc.date.issued 2020
dc.identifier.issn 1063-7842
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/162081
dc.description.abstract © 2020, Pleiades Publishing, Ltd. Abstract: We report on the results of first practical observations of sputtering of the Si surface during the implantation with Ag+ ions with an energy of 30 keV depending on irradiation dose D in the interval from 2.5 × 1016 to 1.5 × 1017 ion/cm2 for a fixed value of ion beam current density J = 8 μA/cm2, as well as for variation of J = 2, 5, 8, 15, and 20 μA/cm2 at constant D = 1.5 × 1017 ion/cm2. In the former case, the thickness of the porous Si (PSi) layer being sputtered increases monotonically to 50 nm at the maximum value of D; in this case, the effective sputtering ratio of the implanted Ag : PSi layer is 1.6. We have also established that the thickness of the sputtered layer increases with current density J.
dc.relation.ispartofseries Technical Physics
dc.title Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions
dc.type Article
dc.relation.ispartofseries-issue 7
dc.relation.ispartofseries-volume 65
dc.collection Публикации сотрудников КФУ
dc.relation.startpage 1156
dc.source.id SCOPUS10637842-2020-65-7-SID85089092367

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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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