Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN

dc.contributor.author	Mokhov E.N.
dc.contributor.author	Rabchinskiy M.K.
dc.contributor.author	Nagalyuk S.S.
dc.contributor.author	Gafurov M.R.
dc.contributor.author	Kazarova O.P.
dc.date.accessioned	2021-02-25T20:37:20Z
dc.date.available	2021-02-25T20:37:20Z
dc.date.issued	2020
dc.identifier.issn	1063-7826
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/162072
dc.description.abstract	© 2020, Pleiades Publishing, Ltd. Abstract: The influence of the high-temperature (T = 1880°C) diffusion of beryllium ions on the properties of single-crystal aluminum nitride is studied. It is shown that the postgrowth doping of AlN with Be brings about the compensation of shallow Si donor centers uncontrollably incorporated into the AlN lattice during growth. It is established that the introduction of Be into the AlN lattice results in a reduction in the optical absorption of AlN in the visible and ultraviolet regions. The set of results is attributed to a shift of the Fermi level to the top of the valence band of AlN upon the introduction of the Be acceptor impurity.
dc.relation.ispartofseries	Semiconductors
dc.subject	AlN
dc.subject	Be impurity
dc.subject	diffusion
dc.subject	optical properties
dc.title	Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN
dc.type	Article
dc.relation.ispartofseries-issue	3
dc.relation.ispartofseries-volume	54
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	278
dc.source.id	SCOPUS10637826-2020-54-3-SID85083964269

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.