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Diffraction grating on chalcogenide glass (GeSe<inf>5</inf>)<inf>80</inf>B<inf>20</inf> fabricated by mask ion implantation

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dc.contributor.author Stepanov A.L.
dc.contributor.author Rogov A.M.
dc.contributor.author Nuzhdin V.I.
dc.contributor.author Valeev V.F.
dc.contributor.author Kavetskyy T.S.
dc.contributor.author Stronski A.V.
dc.contributor.author Petkova T.
dc.contributor.author Petkov P.
dc.date.accessioned 2021-02-25T20:34:05Z
dc.date.available 2021-02-25T20:34:05Z
dc.date.issued 2020
dc.identifier.issn 0168-583X
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/161775
dc.description.abstract © 2019 Elsevier B.V. An approach for creating of a diffraction chalcogenide semiconductor glass grating on the surface of (GeSe5)80B20 layer by low-energy high-dose mask ion implantation is presented. During Ag+-ion implantation, Ag nanoparticles were synthesized in unprotected areas of irradiated glass. The formation of periodic surface microstructures during local ion sputtering of semiconductor glass was observed by scanning electron and atomic force microscopy. With probed a He-Ne laser the efficiency of optical diffraction grating was demonstrated.
dc.relation.ispartofseries Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.subject Chalcogenide semiconductor glass
dc.subject Diffraction grating
dc.subject Mask ion implantation
dc.subject Metal nanoparticles
dc.title Diffraction grating on chalcogenide glass (GeSe<inf>5</inf>)<inf>80</inf>B<inf>20</inf> fabricated by mask ion implantation
dc.type Article
dc.relation.ispartofseries-volume 462
dc.collection Публикации сотрудников КФУ
dc.relation.startpage 187
dc.source.id SCOPUS0168583X-2020-462-SID85075628863


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  • Публикации сотрудников КФУ Scopus [22633]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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