dc.contributor.author |
Stepanov A.L. |
|
dc.contributor.author |
Batalov R.I. |
|
dc.contributor.author |
Bayazitov R.M. |
|
dc.contributor.author |
Rogov A.M. |
|
dc.date.accessioned |
2021-02-25T20:33:22Z |
|
dc.date.available |
2021-02-25T20:33:22Z |
|
dc.date.issued |
2020 |
|
dc.identifier.issn |
0042-207X |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/161710 |
|
dc.description.abstract |
© 2020 Elsevier Ltd The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various doses from 6.0·1015 to 7.5·1016 ion/cm2 and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0·1015 ion/cm2 leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5·1016 ion/cm2 after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles. |
|
dc.relation.ispartofseries |
Vacuum |
|
dc.subject |
Ion implantation |
|
dc.subject |
Pulse ion annealing |
|
dc.subject |
Silicon |
|
dc.subject |
Silver nanoparticles |
|
dc.title |
Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation |
|
dc.type |
Article |
|
dc.relation.ispartofseries-volume |
182 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS0042207X-2020-182-SID85089943862 |
|