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dc.contributor.author | Stepanov A.L. | |
dc.contributor.author | Batalov R.I. | |
dc.contributor.author | Bayazitov R.M. | |
dc.contributor.author | Rogov A.M. | |
dc.date.accessioned | 2021-02-25T20:33:22Z | |
dc.date.available | 2021-02-25T20:33:22Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 0042-207X | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/161710 | |
dc.description.abstract | © 2020 Elsevier Ltd The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various doses from 6.0·1015 to 7.5·1016 ion/cm2 and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0·1015 ion/cm2 leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5·1016 ion/cm2 after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles. | |
dc.relation.ispartofseries | Vacuum | |
dc.subject | Ion implantation | |
dc.subject | Pulse ion annealing | |
dc.subject | Silicon | |
dc.subject | Silver nanoparticles | |
dc.title | Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation | |
dc.type | Article | |
dc.relation.ispartofseries-volume | 182 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS0042207X-2020-182-SID85089943862 |