Raman quantum memory based on an ensemble of silicon-vacancy centers in diamond

dc.contributor.author	Kalachev A.
dc.contributor.author	Berezhnoi A.
dc.contributor.author	Hemmer P.
dc.contributor.author	Kocharovskaya O.
dc.date.accessioned	2020-01-21T20:46:01Z
dc.date.available	2020-01-21T20:46:01Z
dc.date.issued	2019
dc.identifier.issn	1054-660X
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/157758
dc.description.abstract	© 2019 Astro Ltd. The possibility of implementing a cavity-enhanced off-resonant Raman quantum memory in an ensemble of silicon-vacancy centers in diamond is studied. It is shown that the signal-to-noise ratio at the output of the memory can significantly exceed unity for short single-photon pulses if the number of optical centers is small enough, which can be achieved with diamond samples in optical microresonators, and level splitting in their ground state is significantly enhanced by strain.
dc.relation.ispartofseries	Laser Physics
dc.subject	cavity
dc.subject	diamond
dc.subject	quantum memory
dc.subject	Raman absorption
dc.subject	signal-to-noise ratio
dc.subject	silicon-vacancy center
dc.subject	single photon
dc.title	Raman quantum memory based on an ensemble of silicon-vacancy centers in diamond
dc.type	Article
dc.relation.ispartofseries-issue	10
dc.relation.ispartofseries-volume	29
dc.collection	Публикации сотрудников КФУ
dc.source.id	SCOPUS1054660X-2019-29-10-SID85074789656

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