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dc.date.accessioned | 2019-01-22T20:58:36Z | |
dc.date.available | 2019-01-22T20:58:36Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 2469-9926 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/149700 | |
dc.description.abstract | © 2018 American Physical Society. We present a formalism based on first principles of quantum electrodynamics at nonzero temperature which permits us to calculate the Casimir-Polder interaction between an atom and a graphene sheet with arbitrary mass gap and chemical potential, including graphene-coated substrates. The free energy and force of the Casimir-Polder interaction are expressed via the polarization tensor of graphene in (2+1)-dimensional space-time in the framework of the Dirac model. The obtained expressions are used to investigate the influence of the chemical potential of graphene on the Casimir-Polder interaction. Computations are performed for an atom of metastable helium interacting with either a freestanding graphene sheet or a graphene-coated substrate made of amorphous silica. It is shown that the impacts of the nonzero chemical potential and the mass gap on the Casimir-Polder interaction are in opposite directions, by increasing and decreasing the magnitudes of the free energy and force, respectively. It turns out, however, that the temperature-dependent part of the Casimir-Polder interaction is decreased by a nonzero chemical potential, whereas the mass gap increases it compared to the case of undoped, gapless graphene. The physical explanation for these effects is provided. Numerical computations of the Casimir-Polder interaction are performed at various temperatures and atom-graphene separations. | |
dc.relation.ispartofseries | Physical Review A | |
dc.title | Influence of the chemical potential on the Casimir-Polder interaction between an atom and gapped graphene or a graphene-coated substrate | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 3 | |
dc.relation.ispartofseries-volume | 97 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS24699926-2018-97-3-SID85043986148 |