dc.date.accessioned |
2019-01-22T20:58:36Z |
|
dc.date.available |
2019-01-22T20:58:36Z |
|
dc.date.issued |
2018 |
|
dc.identifier.issn |
2469-9926 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/149700 |
|
dc.description.abstract |
© 2018 American Physical Society. We present a formalism based on first principles of quantum electrodynamics at nonzero temperature which permits us to calculate the Casimir-Polder interaction between an atom and a graphene sheet with arbitrary mass gap and chemical potential, including graphene-coated substrates. The free energy and force of the Casimir-Polder interaction are expressed via the polarization tensor of graphene in (2+1)-dimensional space-time in the framework of the Dirac model. The obtained expressions are used to investigate the influence of the chemical potential of graphene on the Casimir-Polder interaction. Computations are performed for an atom of metastable helium interacting with either a freestanding graphene sheet or a graphene-coated substrate made of amorphous silica. It is shown that the impacts of the nonzero chemical potential and the mass gap on the Casimir-Polder interaction are in opposite directions, by increasing and decreasing the magnitudes of the free energy and force, respectively. It turns out, however, that the temperature-dependent part of the Casimir-Polder interaction is decreased by a nonzero chemical potential, whereas the mass gap increases it compared to the case of undoped, gapless graphene. The physical explanation for these effects is provided. Numerical computations of the Casimir-Polder interaction are performed at various temperatures and atom-graphene separations. |
|
dc.relation.ispartofseries |
Physical Review A |
|
dc.title |
Influence of the chemical potential on the Casimir-Polder interaction between an atom and gapped graphene or a graphene-coated substrate |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
3 |
|
dc.relation.ispartofseries-volume |
97 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS24699926-2018-97-3-SID85043986148 |
|