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dc.date.accessioned | 2019-01-22T20:47:39Z | |
dc.date.available | 2019-01-22T20:47:39Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 1742-6588 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/148808 | |
dc.description.abstract | © 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested for the synthesis of thin porous PGe layers with Ag nanoparticles based on low-energy high-dose ion implantation of single-crystal c-Ge. To demonstrate a successes of this technique, an Ag+-ion implantation of a polished c-Ge substrates with an energy of 30 keV at various doses of 1.0·1016 -1.5·1017 ion/cm2 and a current density of 5 μA/cm2 was performed. Various analytical methods such as scanning electron and probe microscopy, as well as EDX analysis and electron backscattered diffraction were applied for observation of PGe formation of a spongy structure consisting of a network of intersecting Ge nanowires. At the ends of the nanowires, the synthesis of Ag nanoparticles were detected. It was also found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Ge surface. | |
dc.relation.ispartofseries | Journal of Physics: Conference Series | |
dc.title | Porous germanium with Ag nanoparticles formed by ion implantation | |
dc.type | Conference Paper | |
dc.relation.ispartofseries-volume | 1092 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS17426588-2018-1092-SID85056229336 |