dc.date.accessioned |
2019-01-22T20:47:39Z |
|
dc.date.available |
2019-01-22T20:47:39Z |
|
dc.date.issued |
2018 |
|
dc.identifier.issn |
1742-6588 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/148808 |
|
dc.description.abstract |
© 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested for the synthesis of thin porous PGe layers with Ag nanoparticles based on low-energy high-dose ion implantation of single-crystal c-Ge. To demonstrate a successes of this technique, an Ag+-ion implantation of a polished c-Ge substrates with an energy of 30 keV at various doses of 1.0·1016 -1.5·1017 ion/cm2 and a current density of 5 μA/cm2 was performed. Various analytical methods such as scanning electron and probe microscopy, as well as EDX analysis and electron backscattered diffraction were applied for observation of PGe formation of a spongy structure consisting of a network of intersecting Ge nanowires. At the ends of the nanowires, the synthesis of Ag nanoparticles were detected. It was also found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Ge surface. |
|
dc.relation.ispartofseries |
Journal of Physics: Conference Series |
|
dc.title |
Porous germanium with Ag nanoparticles formed by ion implantation |
|
dc.type |
Conference Paper |
|
dc.relation.ispartofseries-volume |
1092 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS17426588-2018-1092-SID85056229336 |
|