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dc.contributor.author | Batalov R. | |
dc.contributor.author | Vorobev V. | |
dc.contributor.author | Nuzhdin V. | |
dc.contributor.author | Valeev V. | |
dc.contributor.author | Bizyaev D. | |
dc.contributor.author | Bukharaev A. | |
dc.contributor.author | Bayazitov R. | |
dc.contributor.author | Osin Y. | |
dc.contributor.author | Ivlev G. | |
dc.contributor.author | Stepanov A. | |
dc.date.accessioned | 2019-01-22T20:33:40Z | |
dc.date.available | 2019-01-22T20:33:40Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0030-400X | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/147716 | |
dc.description.abstract | © 2018, Pleiades Publishing, Ltd. Abstract: With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser (λ = 0.694 µm) on single-crystal c-Si implanted with a high dose of Ag+ ions is studied. The pulsed laser annealing (PLA) is carried out with an energy density exceeding the melting threshold of amorphous а-Si (W ≥ 1.2 J/cm2). During the PLA, temporal dynamics of reflectivity R(t) of probing laser radiation (λ = 1.064 µm) from the Ag:Si layer is explored and compared to data on the melt existence time obtained by the computer simulation. The morphology of the surface, crystallinity, and spectral optical reflection R(λ) of Ag:Si layers subject to PLA are studied. PLA is found to cause melting and subsequent crystallization of the implanted а-Si with ion-synthesized Ag NPs. In addition, a decrease of the surface roughness from 9 to 3–4 nm and redistribution of Ag NP sizes into two fractions—fine (5–15 nm) and larger (40–60 nm)—are observed. The weakening of plasmon intensity Ag NPs in Si (λmax = 835 nm) is observed in R(λ) spectra of an Ag:Si layer after PLA as compared with the initial implanted surface. This weakening may be caused by a decrease in concentration of Ag atoms in the immediate proximity to the surface as a result of Ag impurity partial diffusion within the melted layer, as well as Ag partial evaporation during the PLA. | |
dc.relation.ispartofseries | Optics and Spectroscopy (English translation of Optika i Spektroskopiya) | |
dc.title | The Effect of Pulsed Laser Radiation on a Si Layer with a High Dose of Implanted Ag<sup>+</sup> Ions | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 4 | |
dc.relation.ispartofseries-volume | 125 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 571 | |
dc.source.id | SCOPUS0030400X-2018-125-4-SID85056900120 |