dc.contributor.author |
Batalov R. |
|
dc.contributor.author |
Vorobev V. |
|
dc.contributor.author |
Nuzhdin V. |
|
dc.contributor.author |
Valeev V. |
|
dc.contributor.author |
Bizyaev D. |
|
dc.contributor.author |
Bukharaev A. |
|
dc.contributor.author |
Bayazitov R. |
|
dc.contributor.author |
Osin Y. |
|
dc.contributor.author |
Ivlev G. |
|
dc.contributor.author |
Stepanov A. |
|
dc.date.accessioned |
2019-01-22T20:33:40Z |
|
dc.date.available |
2019-01-22T20:33:40Z |
|
dc.date.issued |
2018 |
|
dc.identifier.issn |
0030-400X |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/147716 |
|
dc.description.abstract |
© 2018, Pleiades Publishing, Ltd. Abstract: With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser (λ = 0.694 µm) on single-crystal c-Si implanted with a high dose of Ag+ ions is studied. The pulsed laser annealing (PLA) is carried out with an energy density exceeding the melting threshold of amorphous а-Si (W ≥ 1.2 J/cm2). During the PLA, temporal dynamics of reflectivity R(t) of probing laser radiation (λ = 1.064 µm) from the Ag:Si layer is explored and compared to data on the melt existence time obtained by the computer simulation. The morphology of the surface, crystallinity, and spectral optical reflection R(λ) of Ag:Si layers subject to PLA are studied. PLA is found to cause melting and subsequent crystallization of the implanted а-Si with ion-synthesized Ag NPs. In addition, a decrease of the surface roughness from 9 to 3–4 nm and redistribution of Ag NP sizes into two fractions—fine (5–15 nm) and larger (40–60 nm)—are observed. The weakening of plasmon intensity Ag NPs in Si (λmax = 835 nm) is observed in R(λ) spectra of an Ag:Si layer after PLA as compared with the initial implanted surface. This weakening may be caused by a decrease in concentration of Ag atoms in the immediate proximity to the surface as a result of Ag impurity partial diffusion within the melted layer, as well as Ag partial evaporation during the PLA. |
|
dc.relation.ispartofseries |
Optics and Spectroscopy (English translation of Optika i Spektroskopiya) |
|
dc.title |
The Effect of Pulsed Laser Radiation on a Si Layer with a High Dose of Implanted Ag<sup>+</sup> Ions |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
4 |
|
dc.relation.ispartofseries-volume |
125 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
571 |
|
dc.source.id |
SCOPUS0030400X-2018-125-4-SID85056900120 |
|