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dc.contributor.author | Garello K. | |
dc.contributor.author | Miron I. | |
dc.contributor.author | Klein O. | |
dc.contributor.author | De Loubens G. | |
dc.contributor.author | Naletov V. | |
dc.contributor.author | Langer J. | |
dc.contributor.author | Ocker B. | |
dc.contributor.author | Gambardella P. | |
dc.contributor.author | Gaudin G. | |
dc.date.accessioned | 2019-01-22T20:32:34Z | |
dc.date.available | 2019-01-22T20:32:34Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0018-9464 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/147635 | |
dc.description.abstract | © 1965-2012 IEEE. We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications. | |
dc.relation.ispartofseries | IEEE Transactions on Magnetics | |
dc.subject | Cache memory | |
dc.subject | MRAM | |
dc.subject | spin transfer | |
dc.subject | spin transfer torque-magnetic random access memory (STT-MRAM) | |
dc.subject | spin-orbit torque | |
dc.subject | spin-orbit torque-MRAM (SOT-MRAM) | |
dc.subject | spintronics | |
dc.title | Ultra-Fast Perpendicular Spin-Orbit Torque MRAM | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 4 | |
dc.relation.ispartofseries-volume | 54 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS00189464-2018-54-4-SID85042082840 |