dc.contributor.author |
Garello K. |
|
dc.contributor.author |
Miron I. |
|
dc.contributor.author |
Klein O. |
|
dc.contributor.author |
De Loubens G. |
|
dc.contributor.author |
Naletov V. |
|
dc.contributor.author |
Langer J. |
|
dc.contributor.author |
Ocker B. |
|
dc.contributor.author |
Gambardella P. |
|
dc.contributor.author |
Gaudin G. |
|
dc.date.accessioned |
2019-01-22T20:32:34Z |
|
dc.date.available |
2019-01-22T20:32:34Z |
|
dc.date.issued |
2018 |
|
dc.identifier.issn |
0018-9464 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/147635 |
|
dc.description.abstract |
© 1965-2012 IEEE. We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications. |
|
dc.relation.ispartofseries |
IEEE Transactions on Magnetics |
|
dc.subject |
Cache memory |
|
dc.subject |
MRAM |
|
dc.subject |
spin transfer |
|
dc.subject |
spin transfer torque-magnetic random access memory (STT-MRAM) |
|
dc.subject |
spin-orbit torque |
|
dc.subject |
spin-orbit torque-MRAM (SOT-MRAM) |
|
dc.subject |
spintronics |
|
dc.title |
Ultra-Fast Perpendicular Spin-Orbit Torque MRAM |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
4 |
|
dc.relation.ispartofseries-volume |
54 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS00189464-2018-54-4-SID85042082840 |
|