Kazan Federal University Digital Repository

Organic memristive device as transistor: Working principle and possible applications

Show simple item record

dc.contributor.author Battistoni S.
dc.contributor.author Burganova R.
dc.contributor.author Erokhin V.
dc.date.accessioned 2018-09-19T22:36:44Z
dc.date.available 2018-09-19T22:36:44Z
dc.date.issued 2017
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/145328
dc.description.abstract © 2016 IEEE.We report results regarding the possibility of driving an organic memristive device as a transistor, so applying a modulatory gate voltage. Even if transistors and organic memristive device have different working principles, they share the same electrode structure (e.g. gate, source and drain electrode). For memristive standard operational mode, the gate electrode must be used just as reference electrode, biased to ground potential while, in this work, we explored the action of different bias on the output current between the drain and source electrodes.
dc.subject organic electronics
dc.subject Organic Memristor
dc.subject Polyaniline
dc.subject Transistor
dc.title Organic memristive device as transistor: Working principle and possible applications
dc.type Conference Paper
dc.collection Публикации сотрудников КФУ
dc.source.id SCOPUS-2017-SID85016005959


Files in this item

This item appears in the following Collection(s)

  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

Show simple item record

Search DSpace


Advanced Search

Browse

My Account

Statistics