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dc.contributor.author | Bazarov V. | |
dc.contributor.author | Valeev V. | |
dc.contributor.author | Nuzhdin V. | |
dc.contributor.author | Osin Y. | |
dc.contributor.author | Gumarov G. | |
dc.contributor.author | Stepanov A. | |
dc.date.accessioned | 2018-09-18T20:36:41Z | |
dc.date.available | 2018-09-18T20:36:41Z | |
dc.date.issued | 2015 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/141672 | |
dc.description.abstract | © (2015) Trans Tech Publications, Switzerland. Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process. | |
dc.subject | Implanted silicon | |
dc.subject | Ion implantation | |
dc.subject | Kerr effect | |
dc.subject | Magnetic layers | |
dc.subject | Spectral ellipsometry | |
dc.title | Spectral ellipsometry of cobalt-ions implanted silicon surface | |
dc.type | Conference Paper | |
dc.relation.ispartofseries-volume | 233-234 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 526 | |
dc.source.id | SCOPUS-2015-233-234-SID84945219125 |