Spectral ellipsometry of cobalt-ions implanted silicon surface

dc.contributor.author	Bazarov V.
dc.contributor.author	Valeev V.
dc.contributor.author	Nuzhdin V.
dc.contributor.author	Osin Y.
dc.contributor.author	Gumarov G.
dc.contributor.author	Stepanov A.
dc.date.accessioned	2018-09-18T20:36:41Z
dc.date.available	2018-09-18T20:36:41Z
dc.date.issued	2015
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/141672
dc.description.abstract	© (2015) Trans Tech Publications, Switzerland. Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process.
dc.subject	Implanted silicon
dc.subject	Ion implantation
dc.subject	Kerr effect
dc.subject	Magnetic layers
dc.subject	Spectral ellipsometry
dc.title	Spectral ellipsometry of cobalt-ions implanted silicon surface
dc.type	Conference Paper
dc.relation.ispartofseries-volume	233-234
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	526
dc.source.id	SCOPUS-2015-233-234-SID84945219125

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.