dc.contributor.author |
Bazarov V. |
|
dc.contributor.author |
Valeev V. |
|
dc.contributor.author |
Nuzhdin V. |
|
dc.contributor.author |
Osin Y. |
|
dc.contributor.author |
Gumarov G. |
|
dc.contributor.author |
Stepanov A. |
|
dc.date.accessioned |
2018-09-18T20:36:41Z |
|
dc.date.available |
2018-09-18T20:36:41Z |
|
dc.date.issued |
2015 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/141672 |
|
dc.description.abstract |
© (2015) Trans Tech Publications, Switzerland. Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process. |
|
dc.subject |
Implanted silicon |
|
dc.subject |
Ion implantation |
|
dc.subject |
Kerr effect |
|
dc.subject |
Magnetic layers |
|
dc.subject |
Spectral ellipsometry |
|
dc.title |
Spectral ellipsometry of cobalt-ions implanted silicon surface |
|
dc.type |
Conference Paper |
|
dc.relation.ispartofseries-volume |
233-234 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
526 |
|
dc.source.id |
SCOPUS-2015-233-234-SID84945219125 |
|