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Local analysis of porous silicon structure fabricated by nontraditional approach

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dc.contributor.author Vorobev V.
dc.contributor.author Osin Y.
dc.contributor.author Ermakov M.
dc.contributor.author Nuzhdin V.
dc.contributor.author Valeev V.
dc.contributor.author Tayurskii D.
dc.contributor.author Stepanov A.
dc.date.accessioned 2018-09-18T20:25:36Z
dc.date.available 2018-09-18T20:25:36Z
dc.date.issued 2015
dc.identifier.issn 1742-6588
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/139755
dc.description.abstract © Published under licence by IOP Publishing Ltd. A comparison of experimental electron backscattering diffraction patterns for porous Si formed by ion implantation and thermal annealing is presented. For this purposes Ag-ion implantation into monocrystalline c-Si substrates at energy of 30 keV with dose of 1.5×1017 ion/cm2 was carried out. Surface nanoporous Si structures were studied by scanning electron microscope imaging and electron backscattering diffraction. Amorphization of Si after implantation and recrystallization of porous Si after annealing is observed. Ion implantation is suggested to be effective technique for a formation of nanoporous semiconductor layers, which could be easily combined with the crystalline substrate matrix for various applications.
dc.relation.ispartofseries Journal of Physics: Conference Series
dc.title Local analysis of porous silicon structure fabricated by nontraditional approach
dc.type Conference Paper
dc.relation.ispartofseries-issue 1
dc.relation.ispartofseries-volume 661
dc.collection Публикации сотрудников КФУ
dc.source.id SCOPUS17426588-2015-661-1-SID84956857595


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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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