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Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

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dc.contributor.author Leontyev A.
dc.contributor.author Ivanin K.
dc.contributor.author Mitrofanova T.
dc.contributor.author Lobkov V.
dc.contributor.author Samartsev V.
dc.date.accessioned 2018-09-18T20:24:56Z
dc.date.available 2018-09-18T20:24:56Z
dc.date.issued 2013
dc.identifier.issn 1742-6588
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/139650
dc.description.abstract In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics. © Published under licence by IOP Publishing Ltd.
dc.relation.ispartofseries Journal of Physics: Conference Series
dc.title Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy
dc.type Conference Paper
dc.relation.ispartofseries-issue 1
dc.relation.ispartofseries-volume 478
dc.collection Публикации сотрудников КФУ
dc.source.id SCOPUS17426588-2013-478-1-SID84891814055


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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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