Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

dc.contributor.author	Useinov A.
dc.contributor.author	Saeed Y.
dc.contributor.author	Singh N.
dc.contributor.author	Useinov N.
dc.contributor.author	Schwingenschlögl U.
dc.date.accessioned	2018-09-18T20:21:06Z
dc.date.available	2018-09-18T20:21:06Z
dc.date.issued	2013
dc.identifier.issn	1098-0121
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/138986
dc.description.abstract	The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations. © 2013 American Physical Society.
dc.relation.ispartofseries	Physical Review B - Condensed Matter and Materials Physics
dc.title	Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions
dc.type	Article
dc.relation.ispartofseries-issue	6
dc.relation.ispartofseries-volume	88
dc.collection	Публикации сотрудников КФУ
dc.source.id	SCOPUS10980121-2013-88-6-SID84883413768

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