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dc.contributor.author | Useinov A. | |
dc.contributor.author | Saeed Y. | |
dc.contributor.author | Singh N. | |
dc.contributor.author | Useinov N. | |
dc.contributor.author | Schwingenschlögl U. | |
dc.date.accessioned | 2018-09-18T20:21:06Z | |
dc.date.available | 2018-09-18T20:21:06Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/138986 | |
dc.description.abstract | The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations. © 2013 American Physical Society. | |
dc.relation.ispartofseries | Physical Review B - Condensed Matter and Materials Physics | |
dc.title | Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 6 | |
dc.relation.ispartofseries-volume | 88 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS10980121-2013-88-6-SID84883413768 |