dc.contributor.author |
Useinov A. |
|
dc.contributor.author |
Saeed Y. |
|
dc.contributor.author |
Singh N. |
|
dc.contributor.author |
Useinov N. |
|
dc.contributor.author |
Schwingenschlögl U. |
|
dc.date.accessioned |
2018-09-18T20:21:06Z |
|
dc.date.available |
2018-09-18T20:21:06Z |
|
dc.date.issued |
2013 |
|
dc.identifier.issn |
1098-0121 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/138986 |
|
dc.description.abstract |
The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations. © 2013 American Physical Society. |
|
dc.relation.ispartofseries |
Physical Review B - Condensed Matter and Materials Physics |
|
dc.title |
Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
6 |
|
dc.relation.ispartofseries-volume |
88 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS10980121-2013-88-6-SID84883413768 |
|