On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors

dc.contributor.author	Kavetskyy T.
dc.contributor.author	Tsmots V.
dc.contributor.author	Šauša O.
dc.contributor.author	Stepanov A.
dc.date.accessioned	2018-09-18T20:15:52Z
dc.date.available	2018-09-18T20:15:52Z
dc.date.issued	2014
dc.identifier.issn	1063-7826
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/138103
dc.description.abstract	Unirradiated and γ-irradiated (average energy E = 1.25 MeV and dose Φ = 2.41 MGy) chalcogenide glassy semiconductors (CGSs) As2S3 and Ge15.8As21S63.2 are studied by positron annihilation lifetime spectroscopy (PALS) and Doppler broadening of the 0.511-MeV annihilation line (DBAL). Two 22Na positron sources with activities of 0.6 and 2.0 MBq and Kapton film thicknesses of 8.0 and 25.0 μm, respectively, are used. It is shown that radiation-induced changes in the PALS parameters of the CGS types under study are within measurement errors. The DBAL method appeared more efficient and accurate for studying radiation-stimulated processes in CGSs. © 2014 Pleiades Publishing, Ltd.
dc.relation.ispartofseries	Semiconductors
dc.title	On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors
dc.type	Article
dc.relation.ispartofseries-issue	1
dc.relation.ispartofseries-volume	48
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	9
dc.source.id	SCOPUS10637826-2014-48-1-SID84891692538

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.