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Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

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dc.contributor.author Saikin S.
dc.contributor.author Shen M.
dc.contributor.author Cheng M.
dc.date.accessioned 2018-09-18T20:11:17Z
dc.date.available 2018-09-18T20:11:17Z
dc.date.issued 2006
dc.identifier.issn 0953-8984
dc.identifier.uri https://dspace.kpfu.ru/xmlui/handle/net/137386
dc.description.abstract We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. The electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T ≤ 4.2 K, injected spin polarization decays at a distance of the order of 50-100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys. © 2006 IOP Publishing Ltd.
dc.relation.ispartofseries Journal of Physics Condensed Matter
dc.title Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
dc.type Article
dc.relation.ispartofseries-issue 5
dc.relation.ispartofseries-volume 18
dc.collection Публикации сотрудников КФУ
dc.relation.startpage 1535
dc.source.id SCOPUS09538984-2006-18-5-SID31144447928


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  • Публикации сотрудников КФУ Scopus [24551]
    Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.

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