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dc.contributor.author | Orlinskii S. | |
dc.contributor.author | Baranov P. | |
dc.contributor.author | Bundakova A. | |
dc.contributor.author | Bickermann M. | |
dc.contributor.author | Schmidt J. | |
dc.date.accessioned | 2018-09-18T20:10:06Z | |
dc.date.available | 2018-09-18T20:10:06Z | |
dc.date.issued | 2009 | |
dc.identifier.issn | 0921-4526 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/137200 | |
dc.description.abstract | Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in the light of results of a high-frequency pulse electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) study. It was suggested on the basis of the large mostly isotropic hyperfine interaction with A(27Al)=406 MHz that one of the deep-level defect is isolated interstitial Al2+ atom. Two types of effective-mass-like shallow donors with a delocalised wave function were shown to exist in unintentionally doped AlN. The experiments demonstrate how the transformation from a shallow donor to a deep (DX) centre takes place and how the deep DX centre can be reconverted into a shallow donor forming a spin triplet and singlet states with an exchange interaction of about 24 cm-1 and with a lowest triplet state. © 2009 Elsevier B.V. All rights reserved. | |
dc.relation.ispartofseries | Physica B: Condensed Matter | |
dc.subject | AlN | |
dc.subject | Defect | |
dc.subject | Donor | |
dc.subject | ENDOR | |
dc.subject | EPR | |
dc.subject | ESE | |
dc.subject | Negative U | |
dc.title | Defects in AlN: High-frequency EPR and ENDOR studies | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 23-24 | |
dc.relation.ispartofseries-volume | 404 | |
dc.collection | Публикации сотрудников КФУ | |
dc.relation.startpage | 4873 | |
dc.source.id | SCOPUS09214526-2009-404-2324-SID74349123009 |