dc.contributor.author |
Orlinskii S. |
|
dc.contributor.author |
Baranov P. |
|
dc.contributor.author |
Bundakova A. |
|
dc.contributor.author |
Bickermann M. |
|
dc.contributor.author |
Schmidt J. |
|
dc.date.accessioned |
2018-09-18T20:10:06Z |
|
dc.date.available |
2018-09-18T20:10:06Z |
|
dc.date.issued |
2009 |
|
dc.identifier.issn |
0921-4526 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/137200 |
|
dc.description.abstract |
Compensation by deep-level defects and self-compensation of shallow donors in AlN are discussed in the light of results of a high-frequency pulse electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) study. It was suggested on the basis of the large mostly isotropic hyperfine interaction with A(27Al)=406 MHz that one of the deep-level defect is isolated interstitial Al2+ atom. Two types of effective-mass-like shallow donors with a delocalised wave function were shown to exist in unintentionally doped AlN. The experiments demonstrate how the transformation from a shallow donor to a deep (DX) centre takes place and how the deep DX centre can be reconverted into a shallow donor forming a spin triplet and singlet states with an exchange interaction of about 24 cm-1 and with a lowest triplet state. © 2009 Elsevier B.V. All rights reserved. |
|
dc.relation.ispartofseries |
Physica B: Condensed Matter |
|
dc.subject |
AlN |
|
dc.subject |
Defect |
|
dc.subject |
Donor |
|
dc.subject |
ENDOR |
|
dc.subject |
EPR |
|
dc.subject |
ESE |
|
dc.subject |
Negative U |
|
dc.title |
Defects in AlN: High-frequency EPR and ENDOR studies |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
23-24 |
|
dc.relation.ispartofseries-volume |
404 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.relation.startpage |
4873 |
|
dc.source.id |
SCOPUS09214526-2009-404-2324-SID74349123009 |
|