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dc.contributor.author | Khaydukov Y. | |
dc.contributor.author | Morari R. | |
dc.contributor.author | Soltwedel O. | |
dc.contributor.author | Keller T. | |
dc.contributor.author | Christiani G. | |
dc.contributor.author | Logvenov G. | |
dc.contributor.author | Kupriyanov M. | |
dc.contributor.author | Sidorenko A. | |
dc.contributor.author | Keimer B. | |
dc.date.accessioned | 2018-09-18T20:04:39Z | |
dc.date.available | 2018-09-18T20:04:39Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | https://dspace.kpfu.ru/xmlui/handle/net/136278 | |
dc.description.abstract | © 2015 AIP Publishing LLC. We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu60Ni40 prepared by magnetron sputtering. X-ray and neutron reflectometry show that both the overall interfacial roughness and vertical correlations of the roughness of different interfaces are lower for heterostructures deposited on Al2O3(1 1 ¯ 02) substrates than for those deposited on Si(111). Mutual inductance experiments were then used to study the influence of the interfacial roughness on the superconducting transition temperature, TC. These measurements revealed a ∼4% higher TC in heterostructures deposited on Al2O3, compared to those on Si. We attribute this effect to a higher mean-free path of electrons in the S layer, caused by a suppression of diffusive scattering at the interfaces. However, the dependence of the TC on the thickness of the ferromagnetic layer is not significantly different in the two systems, indicating a weak influence of the interfacial roughness on the transparency for Cooper pairs. | |
dc.relation.ispartofseries | Journal of Applied Physics | |
dc.title | Interfacial roughness and proximity effects in superconductor/ferromagnet CuNi/Nb heterostructures | |
dc.type | Article | |
dc.relation.ispartofseries-issue | 21 | |
dc.relation.ispartofseries-volume | 118 | |
dc.collection | Публикации сотрудников КФУ | |
dc.source.id | SCOPUS00218979-2015-118-21-SID84949009012 |