dc.contributor.author |
Khaydukov Y. |
|
dc.contributor.author |
Morari R. |
|
dc.contributor.author |
Soltwedel O. |
|
dc.contributor.author |
Keller T. |
|
dc.contributor.author |
Christiani G. |
|
dc.contributor.author |
Logvenov G. |
|
dc.contributor.author |
Kupriyanov M. |
|
dc.contributor.author |
Sidorenko A. |
|
dc.contributor.author |
Keimer B. |
|
dc.date.accessioned |
2018-09-18T20:04:39Z |
|
dc.date.available |
2018-09-18T20:04:39Z |
|
dc.date.issued |
2015 |
|
dc.identifier.issn |
0021-8979 |
|
dc.identifier.uri |
https://dspace.kpfu.ru/xmlui/handle/net/136278 |
|
dc.description.abstract |
© 2015 AIP Publishing LLC. We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu60Ni40 prepared by magnetron sputtering. X-ray and neutron reflectometry show that both the overall interfacial roughness and vertical correlations of the roughness of different interfaces are lower for heterostructures deposited on Al2O3(1 1 ¯ 02) substrates than for those deposited on Si(111). Mutual inductance experiments were then used to study the influence of the interfacial roughness on the superconducting transition temperature, TC. These measurements revealed a ∼4% higher TC in heterostructures deposited on Al2O3, compared to those on Si. We attribute this effect to a higher mean-free path of electrons in the S layer, caused by a suppression of diffusive scattering at the interfaces. However, the dependence of the TC on the thickness of the ferromagnetic layer is not significantly different in the two systems, indicating a weak influence of the interfacial roughness on the transparency for Cooper pairs. |
|
dc.relation.ispartofseries |
Journal of Applied Physics |
|
dc.title |
Interfacial roughness and proximity effects in superconductor/ferromagnet CuNi/Nb heterostructures |
|
dc.type |
Article |
|
dc.relation.ispartofseries-issue |
21 |
|
dc.relation.ispartofseries-volume |
118 |
|
dc.collection |
Публикации сотрудников КФУ |
|
dc.source.id |
SCOPUS00218979-2015-118-21-SID84949009012 |
|