Cotunneling effects in GaAs vertical double quantum dots

dc.contributor.author	Badrutdinov A.
dc.contributor.author	Huang S.
dc.contributor.author	Kono K.
dc.contributor.author	Ono K.
dc.contributor.author	Tayurskii D.
dc.date.accessioned	2018-09-18T20:04:14Z
dc.date.available	2018-09-18T20:04:14Z
dc.date.issued	2011
dc.identifier.issn	0021-3640
dc.identifier.uri	https://dspace.kpfu.ru/xmlui/handle/net/136214
dc.description.abstract	We report observation of Coulomb blockade lifting in GaAs vertical double quantum dot caused by cotunneling processes. One characteristic feature of investigated sample is relatively low potential barriers between dots and reservoirs, which makes cotunneling processes favorable. The measurement of current through the sample under variable bias and gate voltages was carried out at temperature of dilution refrigerator 10 mK. Several distinct features, specific to double dot, were observed and appropriate explanation for them was given. © 2011 Pleiades Publishing, Ltd.
dc.relation.ispartofseries	JETP Letters
dc.title	Cotunneling effects in GaAs vertical double quantum dots
dc.type	Article
dc.relation.ispartofseries-issue	4
dc.relation.ispartofseries-volume	93
dc.collection	Публикации сотрудников КФУ
dc.relation.startpage	199
dc.source.id	SCOPUS00213640-2011-93-4-SID79955620840

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Публикации сотрудников КФУ Scopus [24551]
Коллекция содержит публикации сотрудников Казанского федерального (до 2010 года Казанского государственного) университета, проиндексированные в БД Scopus, начиная с 1970г.